SURFACE/INTERFACE CHARGE IMAGING BY TIME-RESOLVED SURFACE PHOTOVOLTAGE

被引:0
|
作者
KONTKIEWICZ, AM
DEXTER, M
SEN, S
LAGOWSKI, J
HOFF, A
EDELMAN, P
JASTRZEBSKI, L
NAUKA, K
MISHRA, K
HANLEY, T
机构
[1] SEMICOND DIAGNOST INC,TAMPA,FL 33610
[2] HEWLETT PACKARD CORP,PALO ALTO,CA 94304
[3] MEMC ELECTR MAT INC,ST PETERS,MO 63376
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To date, surface charge monitoring has been done with capacitance-voltage measurements on MIS test capacitors. New surface photovoltage (SPV) methods offer fast, non-destructive, no preparation measurements. We describe SPV surface charge monitoring designed for wafer-scale imaging. The changes of the surface barrier caused by high intensity laser pulses of variable frequency are analyzed in real time with a computerized system. A time resolved method based on frequency dispersion enables distinguishing between lifetime effects, fast interface charge and oxide charge.
引用
收藏
页码:385 / 388
页数:4
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