SURFACE/INTERFACE CHARGE IMAGING BY TIME-RESOLVED SURFACE PHOTOVOLTAGE

被引：0

作者：

KONTKIEWICZ, AM

DEXTER, M

SEN, S

LAGOWSKI, J

HOFF, A

EDELMAN, P

JASTRZEBSKI, L

NAUKA, K

MISHRA, K

HANLEY, T

机构：

[1] SEMICOND DIAGNOST INC,TAMPA,FL 33610

[2] HEWLETT PACKARD CORP,PALO ALTO,CA 94304

[3] MEMC ELECTR MAT INC,ST PETERS,MO 63376

来源：

DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES | 1994年 / 135期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To date, surface charge monitoring has been done with capacitance-voltage measurements on MIS test capacitors. New surface photovoltage (SPV) methods offer fast, non-destructive, no preparation measurements. We describe SPV surface charge monitoring designed for wafer-scale imaging. The changes of the surface barrier caused by high intensity laser pulses of variable frequency are analyzed in real time with a computerized system. A time resolved method based on frequency dispersion enables distinguishing between lifetime effects, fast interface charge and oxide charge.

引用

页码：385 / 388

页数：4

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