FREE-CARRIER DECAY TIMES IN SEMICONDUCTORS CONTAINING DONORS AND ISOELECTRONIC TRAPS

被引：0
|
作者：
CUTHBERT, JD
STERN, RA
机构：
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1968年 / 13卷 / 11期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：1475 / &
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