RECOMBINATION AT GAAS-SURFACES AND GAAS/ALGAAS INTERFACES PROBED BY INSITU PHOTOLUMINESCENCE

被引：15
|
作者：
SANDROFF, CJ
TURCOSANDROFF, FS
FLOREZ, LT
HARBISON, JP
机构：
[1] Bellcore, Red Bank, NJ 07701
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期
关键词：
D O I：
10.1063/1.349210
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We use in situ photoluminescence (PL) to investigate recombination at (100)GaAs surfaces and GaAs/AlGaAs interfaces in a controlled crystal growth environment. PL was monitored for different GaAs surface reconstructions, after surface chemical modification, and during early stages of AlGaAs heteroepitaxy. Depositing approximately 1 ML of Se to form a (2 x 1) surface increased the GaAs PL intensity 200 times. Surprisingly, it required 6 ML (15 angstrom) of heteroepitaxial AlGaAs to achieve the same degree of surface passivation. We invoke lateral variations in interfacial AlGaAs composition to explain these results.
引用
收藏
页码：3632 / 3635
页数：4
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