LOW THRESHOLD CURRENT AND HIGH RELAXATION OSCILLATION FREQUENCY OF SHORT-CAVITY INTEGRABLE INP/INGAASP BRS LASER

被引：2
|
作者：
BOUADMA, N
SERMAGE, B
DEVOLDERE, P
机构：
[1] Centre National dEtudes des Telecommunications, Laboratoire de Bagneux, Henri Ravera Bagneux
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期
关键词：
BURIED RIDGE STRIPE STRUCTURE; ION BEAM ETCHING; THRESHOLD CURRENT; RELAXATION OSCILLATION; MODULATION BANDWIDTH;
D O I：
10.1143/JJAP.29.L2223
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We describe the fabrication and modulation characteristics of short cavity InP/InGaAsP buried ridge stripe (BRS) lasers with ion beam etched facets. A CW threshold current as low as 9 mA is achieved for 50- mu-m-long cavity laser. A relaxation oscillation frequency in excess of 17 GHz is observed in such laser for an output optical power of only 9 mW/facet. The small signal - 3 dB modulation frequency of such device is 11.5 GHz and is limited by the parasitic impedances of the BRS structure.
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页码：L2223 / L2225
页数：3
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