DRIFT MOBILITY AND PHOTOCONDUCTIVITY FOR P-TYPE AND N-TYPE SPUTTERED GE25SE75-XBIX FILMS

被引:5
|
作者
KOUNAVIS, P [1 ]
MYTILINEOU, E [1 ]
机构
[1] INST CHEM ENGN & HIGH TEMP CHEM PROC,GR-26110 PATRAS,GREECE
关键词
D O I
10.1016/0022-3093(89)90082-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:103 / 105
页数:3
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE IN GE25SE75-XBIX SPUTTERED FILMS
    MYTILINEOU, E
    LIN, ZH
    TAYLOR, PC
    SOLID STATE COMMUNICATIONS, 1992, 84 (06) : 617 - 619
  • [2] P-N-JUNCTIONS FROM SPUTTERED GE25SE75-XBIX FILMS
    KOUNAVIS, P
    MYTILINEOU, E
    ROILOS, M
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 708 - 710
  • [3] Raman scattering in sputtered amorphous Ge25Se75-xBix films
    Mytilineou, E
    Chao, BS
    Papadimitriou, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 195 (03) : 279 - 285
  • [4] GAP-STATE DISTRIBUTION IN GE25SE75-XBIX SPUTTERED FILMS BY PHASE-SHIFT ANALYSIS OF MODULATED PHOTOCURRENTS
    KOUNAVIS, P
    MYTILINEOU, E
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 955 - 958
  • [5] Persistent n-type photoconductivity in p-type ZnO
    Claflin, B
    Look, DC
    Park, SJ
    Cantwell, G
    JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) : 16 - 22
  • [6] SPIN-DEPENDENT PHOTOCONDUCTIVITY IN N-TYPE AND P-TYPE AMORPHOUS SILICON
    SOLOMON, I
    BIEGELSEN, D
    KNIGHTS, JC
    SOLID STATE COMMUNICATIONS, 1977, 22 (08) : 505 - 508
  • [7] Persistent photoconductivity in p-type GaN epilayers and n-type AlGaN/GaN heterostructures
    Li, JZ
    Lin, JY
    Jiang, HX
    Khan, MA
    Chen, Q
    Salvador, A
    Botchkarev, A
    Morkoc, H
    III-V NITRIDES, 1997, 449 : 537 - 542
  • [8] Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping
    Boland, Jessica L.
    Casadei, Alberto
    Tuetuencueoglu, Gozde
    Matteini, Federico
    Davies, Christopher L.
    Jabeen, Fauzia
    Joyce, Hannah J.
    Herz, Laura M.
    Fontcuberta i Morral, Anna
    Johnston, Michael B.
    ACS NANO, 2016, 10 (04) : 4219 - 4227
  • [9] N-TYPE NEGATIVE RESISTANCE AND PHOTOCONDUCTIVITY OF SULFUR-DOPED P-TYPE SI
    LEBEDEV, AA
    SULTANOV, NA
    TUCHKEVI.VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 25 - +
  • [10] ELASTIC CONSTANTS OF HEAVILY DOPED N-TYPE SI AND P-TYPE GE
    BEILIN, VM
    VEKILOV, YK
    KRASILNI.OM
    SOVIET PHYSICS SOLID STATE,USSR, 1970, 12 (03): : 531 - +