METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH FOR BURIED HETEROSTRUCTURE GAALAS LASERS WITH SEMIINSULATING BLOCKING LAYERS

被引：6
|
作者：
OKAYASU, M
KOZEN, A
HASUMI, Y
TEMMYO, J
UEHARA, S
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期
关键词：
D O I：
10.1063/1.98317
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1980 / 1982
页数：3
相关论文
共 50 条
  • [1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAINASP/GAAS
    KNAUER, A
    ERBERT, G
    GRAMLICH, S
    OSTER, A
    RICHTER, E
    ZEIMER, U
    WEYERS, M
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1655 - 1658
  • [2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP
    YOSHINO, J
    IWAMOTO, T
    KUKIMOTO, H
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 74 - 78
  • [3] ANALYSIS OF LEAKAGE CURRENT IN BURIED HETEROSTRUCTURE LASERS WITH SEMIINSULATING BLOCKING LAYERS
    ASADA, S
    SUGOU, S
    KASAHARA, KI
    KUMASHIRO, S
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) : 1362 - 1368
  • [4] LIQUID-PHASE EPITAXIAL-GROWTH OF BURIED HETEROSTRUCTURE DFB LASERS
    KUSUNOKI, T
    OKAZAKI, N
    TANAHASHI, T
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1988, 24 (02): : 133 - 142
  • [5] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF LITHIUM-DOPED ZNS
    MITSUISHI, I
    SHIBATANI, J
    KAO, MH
    YAMAMOTO, M
    YOSHINO, J
    KUKIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (05): : L733 - L735
  • [6] GAAS VAPOR-PHASE EPITAXIAL-GROWTH
    HARADA, H
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1972, 20 (11-1): : 1077 - 1086
  • [7] REPRODUCIBLE LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASP BURIED HETEROSTRUCTURE LASERS
    LOGAN, RA
    TEMKIN, H
    BLAHA, JP
    STREGE, KE
    APPLIED PHYSICS LETTERS, 1987, 51 (18) : 1407 - 1409
  • [8] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND STRUCTURAL CHARACTERIZATION OF GAAS/INP HETEROSTRUCTURES
    ATTOLINI, G
    FRANZOSI, P
    PELOSI, C
    LAZZARINI, L
    SALVIATI, G
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 153 - 158
  • [9] PHOTON-ASSISTED METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF UNDOPED GAAS
    VERMAAK, JS
    GOUWS, D
    LEITCH, AWR
    RAUBENHEIMER, D
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1988, 84 (08) : 681 - 682
  • [10] HIGH-FREQUENCY BURIED HETEROSTRUCTURE 1.5 MU-MN GAINASP-INP LASERS, GROWN ENTIRELY BY METALORGANIC VAPOR-PHASE EPITAXY IN 2 EPITAXIAL-GROWTH STEPS
    TANBUNEK, T
    LOGAN, RA
    VANDERZIEL, JP
    ELECTRONICS LETTERS, 1988, 24 (24) : 1483 - 1484
12345