ORIGIN OF LEAKAGE CURRENTS IN SILICON-ON-SAPPHIRE MOS-TRANSISTORS

被引：31

作者：

MCGREIVY, DJ ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,NEWPORT BEACH RES CTR,NEWPORT BEACH,CA 92663

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 06期

关键词：

D O I：

10.1109/T-ED.1977.18812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：730 / 738

页数：9

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