THEORY OF SI DONOR-ACCEPTOR COMPLEXES IN GAAS

被引：8

作者：

JONES, R ^{[1
]}

OBERG, S ^{[1
]}

机构：

[1] UNIV LULEA,DEPT MATH,S-95187 LULEA,SWEDEN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 12期

关键词：

D O I：

10.1088/0268-1242/9/12/022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Local density functional cluster calculations are carried out on Si-Ga-As-X complexes where X = Li, Be, Cu, Zn and a vacancy. We find that that the donor and acceptor move away from each other contrary to a simple argument based on a Coulomb attraction between them. This result explains the insensitivity of the Si-related local vibrational modes to the identity of the impurity and their similarity to the case when X is a vacancy.

引用

页码：2291 / 2294

页数：4

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