FABRICATION AND CHARACTERIZATION OF METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING SPUTTERED SILICON-NITRIDE FILM AS A GATE DIELECTRIC

被引：3
|
作者：
SUNDARAM, KB
SESHAN, SS
机构：
[1] Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL
[2] Department of Engineering, University of Cambridge, Cambridge, CB3 1PZ, Trumpington street
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1994年 / 77卷 / 01期
关键词：
D O I：
10.1080/00207219408926034
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF magnetron sputter deposited silicon nitride film was used as the gate dielectric material for the fabrication of metal-insulator-semiconductor field effect transistors, The fabrication process of an enhancement type n-channel device is discussed in detail. The electrical measurements for the fabricated devices indicated low threshold voltages.
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页码：61 / 69
页数：9
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