CRSI2/SI(III) - GROWTH OF MONOTYPE DOMAINS BY SOLID-PHASE EPITAXY ON A VICINAL SURFACE

CrSi₂ layers grown by solid phase epitaxy on a nominal (111) Si surface exhibit in the same proportion two different orientation relationships, named A and B. When CrSi₂ is deposited on a 8° vicinal (111) Si surface, B-type orientation is favored with respect to the A type. This result can be explained by the fact that both the step width introduced by the miscut and the planar coincidence between {1100}CrSh and {112}Si are nearly equal to 23 A. 60° misfit dislocations are observed at the interface with the same spacing. Their Burgers vector component along [111] can be almost exactly compensated by steps along the (110) directions, which make possible a coherent growth of the B-type orientation. © 1994, American Vacuum Society. All rights reserved.