STATES OF HYDROGEN AND MECHANISMS OF PASSIVATION OF IMPURITIES AND RADIATION DEFECTS IN CRYSTALLINE SILICON

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作者：
MUKASHEV, BN
TAMENDAROV, MF
TOKMOLDIN, SZ
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 06期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An investigation was made of the states of atomic hydrogen in silicon and the influence of hydrogen on the passivation of impurities and radiation defects and on modification of their energy levels. It was found that hydrogen behaves as a bistable impurity and is localized in tetrahedral (T) interstice in states H(T)-/H(T)0 (E(c)-0.2 eV) and H(T)0/H(T)+ (E(v)+0.3 eV) and at the center of an Si-Si bond in a state H(BC)0/H(BC)+ (E(c)-0.16 eV). Models are proposed of the process of passivation of shallow donors and acceptors, of vacancy-type defects, and also of atoms of transition metals and sulfur.
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页码：628 / 634
页数：7
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