HG VACANCY DIFFUSION IN MERCURY CADMIUM TELLURIDE

被引：3
|
作者：
NEUBERT, M [1 ]
KIESSLING, FM [1 ]
BARZ, B [1 ]
JACOBS, K [1 ]
机构：
[1] HUMBOLDT UNIV,RECHENZENTRUM,O-1040 BERLIN,GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期
关键词：
D O I：
10.1016/S0022-0248(07)80008-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In Hg0.8Cd0.2Te crystals grown by the travelling heater method (THM), a significant increase in carrier concentration in the last solidified part is observed. The carriers can be identified with mercury vacancies. The observed longitudinal vacancy concentration profiles can be quantitatively described by a model that takes into account the thermal history of the different parts of the crystal along its length and a concentration dependent Hg vacancy diffusion coefficient.
引用
收藏
页码：604 / 608
页数：5
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