A SELF-CONSISTENT MODEL FOR THE SIT DC CHARACTERISTICS

被引：9
|
作者：
STROLLO, AGM
SPIRITO, P
机构：
[1] Department of Electronic Engineering, University of Naples, 80125, Naples
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 08期
关键词：
D O I：
10.1109/16.119037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model is developed for the dc characteristics of the Static Induction Transistor (SIT). The model is based on an accurate two-dimensional solution for the potential distribution in the device and is able to explain the I-V curves of the SIT in the full range of the bias condition, with a good agreement with the results of numerical simulations. The analytical model is used to study the influence of the main geometrical and physical parameters of the device on its electrical characteristics.
引用
收藏
页码：1943 / 1951
页数：9
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