The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure

被引：0
|
作者：
Berrah, S. [1 ]
Abid, H. [1 ]
Boukortt, A. [1 ]
机构：
[1] Univ Djillali Liabes Sidi Bel Abbes, Appl Mat Lab, Sidi Bel Abbes 22000, Algeria
来源：
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2006年 / 9卷 / 02期
关键词：
lattice parameter; bulk modulus; pressure coefficient; refraction index; FPLAPW; WIEN(2k);
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical values.
引用
收藏
页码：12 / 16
页数：5
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