RAMAN-SCATTERING STUDY OF LATTICE DISORDER IN 1-MEV SI-IMPLANTED GAAS

被引：29
|
作者：
BRAUNSTEIN, G [1 ]
TUSCHEL, D [1 ]
CHEN, S [1 ]
LEE, ST [1 ]
机构：
[1] EASTMAN KODAK CO,DIV ANALYT TECHNOL,ROCHESTER,NY 14650
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期
关键词：
D O I：
10.1063/1.344108
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3515 / 3522
页数：8
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