INFLUENCE OF BUILT-IN STRAIN ON HALL-EFFECT IN INGAAS/GAAS QUANTUM-WELL STRUCTURES WITH P-TYPE MODULATION DOPING

被引：10
|
作者：
FRITZ, IJ
DOYLE, BL
SCHIRBER, JE
JONES, ED
DAWSON, LR
DRUMMOND, TJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 10期
关键词：
D O I：
10.1063/1.97047
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：581 / 583
页数：3
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