HOLOGRAPHIC PHOTOELECTRO-CHEMICAL ETCHING OF SUBMICRON GRATINGS IN NORMAL-INP FOR DFB DBR LASERS

被引：0

作者：

WU, J

LIU, RT

LIN, SM

机构：

[1] Department of Applied Physics Faculty of Engineering, University of Tokyo, Tokyo, 113, 7-3-1 Hongo, Bunkyo-ku

[2] Department of Physics, Xiamen University, Xiamen, Fujian

[3] Department of Electronics Engineering, Xiamen University, Xiamen, Fujian

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1991年 / 4卷 / 05期

关键词：

SEMICONDUCTOR; HOLOGRAPHIC INTERFERENCE; PHOTOELECTROCHEMISTRY;

D O I：

10.1002/mop.4650040512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Second-order diffraction gratings for 1.55-mu-m DFB/DBR lasers have been formed by holographic photoelectrochemical (PEC) etching directly on n-InP substrates with high uniformity and reproducibility. In particular, the dependence of PEC etching rate on the biasing voltage is investigated. The optimum biasing voltage is also given.

引用

页码：209 / 212

页数：4

共 3 条

[1] HOLOGRAPHIC PHOTOELECTROCHEMICAL ETCHING OF DIFFRACTION GRATINGS IN N-INP AND N-GALNASP FOR DISTRIBUTED FEEDBACK LASERS
LUM, RM
GLASS, AM
OSTERMAYER, FW
KOHL, PA
BALLMAN, AA
LOGAN, RA
JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) : 39 - 44
[2] Maskless fabrication of submicron nonharmonic relief gratings for single-frequency DFB semiconductor lasers by three-beam holographic method
Khudobenko, AI
Panchenko, VY
Seminogov, VN
LASERS AS TOOLS FOR MANUFACTURING OF DURABLE GOODS AND MICROELECTRONICS, 1996, 2703 : 576 - 578
[3] FABRICATION OF SUBMICRON GRATINGS FOR 1.5-MU-M INGAASP/INP DISTRIBUTED FEEDBACK LASERS BY REACTIVE ION ETCHING USING C2H6/H2
SUGIMOTO, H
ABE, Y
OHISHI, T
OHTSUKA, K
MATSUI, T
YOSHIYASU, H
NOMURA, Y
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (10) : 2969 - 2974

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