HIGH-SPEED PULLING OF GAAS SINGLE-CRYSTAL USING THE MAGNETIC-FIELD APPLIED LEC TECHNIQUE

被引：2

作者：

KIMURA, T ^{[1
]}

OBOKATA, T ^{[1
]}

FUKUDA, T ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 03期

关键词：

D O I：

10.1016/0022-0248(87)90266-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：394 / 398

页数：5

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[1] A NEW MAGNETIC-FIELD APPLIED PULLING APPARATUS FOR LEC GAAS SINGLE-CRYSTAL GROWTH
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[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) : 423 - 425
[2] GROWTH AND CHARACTERIZATION OF GAAS SINGLE-CRYSTAL BY MAGNETIC-FIELD LEC TECHNIQUE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C94 - C94
[3] VERTICAL MAGNETIC-FIELD APPLIED LEC APPARATUS FOR LARGE DIAMETER GAAS SINGLE-CRYSTAL GROWTH
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[4] THE EFFECT OF STRONG MAGNETIC-FIELD ON HOMOGENEITY IN LEC GAAS SINGLE-CRYSTAL
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[6] HOMOGENEITY OF VERTICAL MAGNETIC-FIELD APPLIED LEC GAAS CRYSTAL
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[7] LARGE DIAMETER LEC GAAS CRYSTAL-GROWTH BY VERTICAL AND HORIZONTAL MAGNETIC-FIELD APPLIED PULLING APPARATUS
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[10] NEUTRON-DIFFRACTION STUDY OF SINGLE-CRYSTAL EUROPIUM IN AN APPLIED MAGNETIC-FIELD
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