DEVELOPMENT OF SILICON MICROPATTERN (PIXEL) DETECTORS

被引:5
|
作者
DELPIERRE, P
BEUSCH, W
BOSISIO, L
BOUTONNET, C
CAMPBELL, M
CHESI, E
CLEMENS, JC
COHENSOLAL, M
DEBUSSCHERE, I
DIERICKX, B
ENZ, C
FOCARDI, E
FORTI, F
GLASER, M
HEIJNE, E
HERMANS, L
HURST, R
KARAR, A
KRUMMENACHER, F
JAEGER, JJ
JARRON, P
LEMEILLEUR, F
NAVA, F
NEYER, C
OTTAVIANI, G
POTHEAU, R
QUERCIGH, E
REDAELLI, N
ROSSI, L
SAUVAGE, D
TONELLI, G
VANSTRAELEN, G
VEGNI, G
VIERTEL, G
WAISBARD, J
机构
[1] CTR PHYS PARTICULES MARSEILLE,F-13288 MARSEILLE 09,FRANCE
[2] ECOLE POLYTECH FED LAUSANNE,CH-1007 LAUSANNE,SWITZERLAND
[3] SWISS FED INST TECHNOL,CH-8092 ZURICH,SWITZERLAND
[4] INTERUNIV MICROELECTR CTR,B-3001 LOUVAIN,BELGIUM
[5] IST NAZL FIS NUCL,I-40126 BOLOGNA,ITALY
[6] IST NAZL FIS NUCL,I-60146 GENOA,ITALY
[7] IST NAZL FIS NUCL,I-20133 MILAN,ITALY
[8] IST NAZL FIS NUCL,I-56010 PISA,ITALY
关键词
D O I
10.1016/0168-9002(92)90693-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In the framework of the CERN detector R&D effort in view of future high luminosity colliders, several pixel detector prototypes, both hybrid and monolithic, are being developed. A hybrid matrix of 16 x 64 pixels with a new readout cell is described here, and it will be first used for a test in a heavy-ion experiment. Preliminary results from the application of SOI processes on high resistivity silicon are also presented.
引用
收藏
页码:133 / 138
页数:6
相关论文
共 50 条
  • [21] Radiation hardness studies of silicon pixel detectors
    Lari, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 560 (01): : 93 - 97
  • [22] Imaging of biological samples with silicon pixel detectors
    Cappellini, C.
    Bulgheroni, A.
    Caccia, M.
    Chmill, V.
    Jastrzab, M.
    Risigo, F.
    Scopelliti, P.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 591 (01): : 34 - 37
  • [23] Monolithic Pixel Detectors in Silicon On Insulator Technology
    Bisello, Dario
    XXXV BRAZILIAN WORKSHOP ON NUCLEAR PHYSICS, 2013, 1529 : 117 - 123
  • [24] Monolithic silicon pixel detectors in SOI technology
    Marczewski, J
    Caccia, M
    Domanski, K
    Grabiec, P
    Grodner, M
    Jaroszewicz, B
    Klatka, T
    Kociubinski, A
    Koziel, M
    Kucewicz, W
    Kucharski, K
    Kuta, S
    Niemiec, H
    Sapor, M
    Szelezniak, M
    Tomaszewski, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 549 (1-3): : 112 - 116
  • [25] Simulation of signal in irradiated silicon pixel detectors
    Kramberger, G
    Contarato, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 511 (1-2): : 82 - 87
  • [26] New Calorimetry Based on Silicon Pixel Detectors
    Rakhmatullina, A.
    Zherebchevsky, V
    Maltsev, N.
    Nesterov, D.
    Pichugina, D.
    Prokofiev, N.
    PHYSICS OF PARTICLES AND NUCLEI, 2022, 53 (02) : 342 - 346
  • [27] New Calorimetry Based on Silicon Pixel Detectors
    A. Rakhmatullina
    V. Zherebchevsky
    N. Maltsev
    D. Nesterov
    D. Pichugina
    N. Prokofiev
    Physics of Particles and Nuclei, 2022, 53 : 342 - 346
  • [28] Simulating charge collection in silicon pixel detectors
    Pindo, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 395 (03): : 360 - 368
  • [29] Micropattern gas coordinate detectors
    Shafranov, MD
    PHYSICS OF PARTICLES AND NUCLEI, 2002, 33 (05) : 612 - 627
  • [30] Comparative characteristics of GaAs detectors and silicon pixel detectors with internal amplification
    Koltsov, G. I.
    Murashev, V. N.
    Chubenko, A. P.
    Mukhamedshin, R. A.
    Britvich, G. I.
    Chernykh, S. V.
    Chernykh, A. V.
    PERFORMANCE AND RELIABILITY OF SEMICONDUCTOR DEVICES, 2009, 1108 : 75 - +