DEVELOPMENT OF SILICON MICROPATTERN (PIXEL) DETECTORS

被引:5
|
作者
DELPIERRE, P
BEUSCH, W
BOSISIO, L
BOUTONNET, C
CAMPBELL, M
CHESI, E
CLEMENS, JC
COHENSOLAL, M
DEBUSSCHERE, I
DIERICKX, B
ENZ, C
FOCARDI, E
FORTI, F
GLASER, M
HEIJNE, E
HERMANS, L
HURST, R
KARAR, A
KRUMMENACHER, F
JAEGER, JJ
JARRON, P
LEMEILLEUR, F
NAVA, F
NEYER, C
OTTAVIANI, G
POTHEAU, R
QUERCIGH, E
REDAELLI, N
ROSSI, L
SAUVAGE, D
TONELLI, G
VANSTRAELEN, G
VEGNI, G
VIERTEL, G
WAISBARD, J
机构
[1] CTR PHYS PARTICULES MARSEILLE,F-13288 MARSEILLE 09,FRANCE
[2] ECOLE POLYTECH FED LAUSANNE,CH-1007 LAUSANNE,SWITZERLAND
[3] SWISS FED INST TECHNOL,CH-8092 ZURICH,SWITZERLAND
[4] INTERUNIV MICROELECTR CTR,B-3001 LOUVAIN,BELGIUM
[5] IST NAZL FIS NUCL,I-40126 BOLOGNA,ITALY
[6] IST NAZL FIS NUCL,I-60146 GENOA,ITALY
[7] IST NAZL FIS NUCL,I-20133 MILAN,ITALY
[8] IST NAZL FIS NUCL,I-56010 PISA,ITALY
关键词
D O I
10.1016/0168-9002(92)90693-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In the framework of the CERN detector R&D effort in view of future high luminosity colliders, several pixel detector prototypes, both hybrid and monolithic, are being developed. A hybrid matrix of 16 x 64 pixels with a new readout cell is described here, and it will be first used for a test in a heavy-ion experiment. Preliminary results from the application of SOI processes on high resistivity silicon are also presented.
引用
收藏
页码:133 / 138
页数:6
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