INVESTIGATION OF ELECTRICAL-PROPERTIES OF PALLADIUM-DOPED GERMANIUM

被引：0
|
作者：
GOLUBEV, NF
LATYSHEV, AV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1074 / 1076
页数：3
相关论文
共 50 条
  • [31] Electrical Properties of Doped Germanium Nanofilms
    Luniov, Sergiy
    Burban, Olexandr
    Koval, Yurii
    PROCEEDINGS OF THE 2020 IEEE 10TH INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATIONS & PROPERTIES (NAP-2020), 2020,
  • [32] INVESTIGATION OF ELECTRICAL-PROPERTIES OF TLGASSE COMPOUND
    GUSEINOV, GD
    SEIDOV, FM
    KERIMOVA, EM
    IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1981, (02): : 62 - 65
  • [33] THE INVESTIGATION OF ELECTRICAL-PROPERTIES OF POLYSILICON RESISTORS
    GARIBOV, MA
    GUSEINOV, NL
    KASIMOV, FD
    MAMIKONOVA, VM
    NURIEV, AD
    SILVESTROVA, NA
    IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1979, (04): : 91 - 94
  • [34] RADIATION DEFECT FORMATION IN PALLADIUM-DOPED SILICON
    MIRZAEV, A
    MAKHKAMOV, S
    TURSUNOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (07): : 746 - 748
  • [35] STRUCTURAL AND ELECTRICAL-PROPERTIES OF ANTIGRANULOCYTES PALLADIUM CLUSTER FILMS
    CARL, A
    DUMPICH, G
    WASSERMANN, EF
    THIN SOLID FILMS, 1990, 193 (1-2) : 1065 - 1072
  • [36] ELECTRICAL-PROPERTIES OF GERMANIUM-DOPED SILICON SINGLE-CRYSTALS SUBJECTED TO HEAT-TREATMENT
    DASHEVSKII, MY
    KORLYAKOV, DN
    MILYAEV, VA
    NIKITIN, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 725 - 727
  • [37] INFLUENCE OF ELECTRON-IRRADIATION ON ELECTRICAL-PROPERTIES OF P-TYPE GERMANIUM DOPED WITH ZINC AND MERCURY
    MAMONTOV, AM
    BARYSHEV, NS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 880 - 881
  • [38] SEM EBIC STUDY OF ELECTRICAL-PROPERTIES IN BULK AND AT GRAIN-BOUNDARIES IN SB-DOPED GERMANIUM
    TABET, N
    MONTY, C
    REVUE DE PHYSIQUE APPLIQUEE, 1989, 24 (06): : 156 - 156
  • [39] ELECTRICAL-PROPERTIES OF LIGHTLY DOPED POLYCRYSTALLINE SILICON
    LEE, JYM
    CHENG, IC
    GATES, JL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C97 - C97
  • [40] ELECTRICAL-PROPERTIES OF CERIA-DOPED YTTRIA
    MARQUES, FMB
    WIRTZ, GP
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (03) : 598 - 605
12345