BACKSCATTERING OF NEUTRONS FROM PERFECT SILICON SINGLE-CRYSTALS

被引：10
|
作者：
HEIDEMANN, A [1 ]
SCHOLZ, J [1 ]
机构：
[1] TH MUNICH, PHYS DEPT, MUNICH, WEST GERMANY
来源：
ZEITSCHRIFT FUR PHYSIK | 1973年 / 263卷 / 04期
关键词：
D O I：
10.1007/BF01391588
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：291 / 298
页数：8
相关论文
共 50 条
  • [41] ANOMALOUS CAPTURE OF THERMAL POLARIZED NEUTRONS IN PERFECT FERROMAGNETIC SINGLE CRYSTALS
    MICHALEC, R
    STICH, V
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1969, 19 (02) : 278 - &
  • [42] GROWTH OF LARGE SILICON SINGLE-CRYSTALS BY A CASTING TECHNIQUE
    DIGGES, TG
    SCHMID, F
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C105 - C105
  • [43] STRUCTURAL TRANSFORMATIONS DUE TO HEATING OF SILICON SINGLE-CRYSTALS
    GLAZOV, VM
    KOLTSOV, VB
    KUTSOVA, VZ
    REGEL, AR
    TARAN, YN
    TIMOSHINA, GG
    UZLOV, KI
    FALKEVICH, ES
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (04): : 355 - 360
  • [44] REACTION OF SILICON SINGLE-CRYSTALS WITH NITROGEN-ATOMS
    SCHROTT, AG
    FAIN, SC
    SU, QX
    AMERICAN CERAMIC SOCIETY BULLETIN, 1981, 60 (09): : 924 - 924
  • [45] THEORY OF MAGNETIZATION OF SILICON-IRON SINGLE-CRYSTALS
    STARODUBTSEV, YN
    FIZIKA METALLOV I METALLOVEDENIE, 1975, 39 (03): : 473 - 477
  • [46] A STUDY OF EXTENDED DEFECTS IN CDS SINGLE-CRYSTALS BY HE+ BACKSCATTERING EXPERIMENTS
    GRIGOREV, AN
    NIKOLAJCHUK, LI
    KHIZHNYAK, NA
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1985, 84 (3-4): : 291 - 299
  • [47] POINT-DEFECT RELAXATION IN SILICON SINGLE-CRYSTALS
    GADAUD, P
    WOIRGARD, J
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1989, 110 : L1 - L4
  • [48] THE ORIGIN OF IRON INTERSTITIAL IN QUENCHED SILICON SINGLE-CRYSTALS
    STOJIC, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 70 (01): : K39 - K42
  • [49] ELLIPSOMETRIC STUDIES OF SILICON-CARBIDE SINGLE-CRYSTALS
    TAIROV, YM
    TSVETKOV, VF
    LAUKHE, Y
    FIZIKA TVERDOGO TELA, 1977, 19 (12): : 3653 - 3656
  • [50] IMPREGNATION WITH HEAVY-IONS IN SILICON SINGLE-CRYSTALS
    KISELEVICH, M
    LYATUSHINSKI, A
    ZHUK, V
    OSIPENKO, BP
    FIZIKA TVERDOGO TELA, 1975, 17 (04): : 1080 - 1084
12345