DECORATED DISLOCATIONS IN SI-GAAS AS REVEALED BY DARK FIELD NIR TRANSMISSION MICROSCOPY

被引：1
|
作者：
CAO, XZ
WITT, AF
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 112卷 / 04期
关键词：
D O I：
10.1016/0022-0248(91)90143-S
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Using NIR transmission microscopy with dark field illumination and computational image processing, it was possible to reveal decorated dislocations in doped n-type and doped as well as undoped SI GaAs. The NIR analysis is characterized by simplicity and speed; it is non-invasive and amenable to fab-line operation.
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收藏
页码：838 / 840
页数：3
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