RADIATION RESISTANCE OF AL2O3 MOS DEVICES

被引：82
|
作者：
ZAININGER, KH
WAXMAN, AS
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 04期
关键词：
D O I：
10.1109/T-ED.1969.16753
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：333 / +
页数：1
相关论文
共 50 条
  • [31] Strain Engineering for the Kapitza Resistance of the ZrO2/α-Al2O3 and YSZ/α-Al2O3 Interfaces
    Xue, Yixuan
    Jiang, Jin-Wu
    ACTA MECHANICA SOLIDA SINICA, 2022, 35 (01): : 101 - 112
  • [32] White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate Dielectric Stacks for High Total Doses
    Zhao, Hongda
    Zheng, Zhongshan
    Zhu, Huiping
    Wang, Lei
    Li, Bo
    Zhang, Zichen
    Wang, Shanfeng
    Yuan, Qingxi
    Jiao, Jian
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2023, 23 (01) : 109 - 115
  • [33] Radiation enhanced diffusion of Ti in Al2O3
    Weiss, M
    Lu, M
    van der Heide, P
    Lee, SM
    Ada, E
    Lee, HS
    Rabalais, JW
    JOURNAL OF CHEMICAL PHYSICS, 2000, 113 (12): : 5058 - 5064
  • [34] Radiation induced conductivity in α Al2O3 crystals
    B. P. Aduev
    É. D. Aluker
    V. N. Shvaiko
    Physics of the Solid State, 1997, 39 : 1784 - 1785
  • [35] Quality and Reliability of in-situ Al2O3 MOS capacitors for GaN-based Power Devices
    Bisi, Davide
    Chan, Silvia H.
    Tahhan, Maher
    Koksaldi, Onur S.
    Keller, Stacia
    Meneghini, Matteo
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    Mishra, Umesh K.
    2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 119 - 122
  • [36] Capacitance-Voltage Analysis for Al2O3 based High-K Dielectric MOS Devices
    Maity, Niladri Pratap
    Pandeya, A.K.
    Maity, Reshmi
    International Journal of Computer Science Issues, 2012, 9 (5 5-2): : 297 - 300
  • [37] Comparative study of the luminescence of Al2O3:C and Al2O3 crystals under synchrotron radiation excitation
    Zorenko, Yu.
    Fabisiak, K.
    Zorenko, T.
    Mandowski, A.
    Xia, Qi
    Batentschuk, M.
    Friedrich, J.
    Zhusupkalieva, G.
    JOURNAL OF LUMINESCENCE, 2013, 144 : 41 - 44
  • [38] Surface and catalytic properties of Al2O3, CuO/Al2O3 and ZnO/Al2O3 systems
    El-Nabarawy, Th.
    Attia, A.A.
    Hassan, N.A.
    Youssef, A.M.
    Adsorption Science and Technology, 1995, 12 (02):
  • [39] Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer
    Liu, Xingpeng
    Peng, Bin
    Zhang, Wanli
    Zhu, Jun
    Liu, Xingzhao
    Wei, Meng
    MATERIALS, 2017, 10 (12):
  • [40] Mechanism for the κ-Al2O3 to the α-Al2O3 transition and the stability of κ-Al2O3 under volume expansion
    Belonoshko, AB
    Ahuja, R
    Johansson, B
    PHYSICAL REVIEW B, 2000, 61 (05): : 3131 - 3134
12345