STUDY OF INTERFACE STATES IN THE METAL-SEMICONDUCTOR JUNCTION USING DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：24
|
作者：
ZHANG, H [1 ]
AOYAGI, Y [1 ]
IWAI, S [1 ]
NAMBA, S [1 ]
机构：
[1] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 06期
关键词：
D O I：
10.1063/1.98194
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：341 / 343
页数：3
相关论文
共 50 条
  • [11] CATHODOLUMINESCENCE SPECTROSCOPY OF METAL-SEMICONDUCTOR INTERFACE STRUCTURES
    BRILLSON, LJ
    VITURRO, RE
    SHAW, JL
    RICHTER, HW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1437 - 1445
  • [12] ELECTRON-STATES LOCALIZED AT THE METAL-SEMICONDUCTOR JUNCTION
    VEKILOV, YK
    VERNER, VD
    YEGOROVA, TI
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1989, 32 (01): : 112 - 114
  • [13] THE METAL-SEMICONDUCTOR INTERFACE
    MCCALDIN, JO
    MCGILL, TC
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 65 - 83
  • [14] Metal-semiconductor junction in silicon nanostructures: role of interface traps
    Chakrabarty, Sudipta
    Santra, Suman
    Hossain, Syed Minhaz
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2024, 130 (05):
  • [15] MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY
    JOHNSON, NM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 303 - 314
  • [16] Experiment with Schottky junction: estimation of metal-semiconductor interface parameters
    Dilshad, Khaleel
    Rabinal, M. K.
    EUROPEAN JOURNAL OF PHYSICS, 2019, 40 (03)
  • [17] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
    BACHRACH, RZ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343
  • [18] Analysis of rectifying metal-semiconductor interface using impedance spectroscopy at low temperatures
    Kumar, Naveen
    Chand, Subhash
    PHYSICA B-CONDENSED MATTER, 2020, 599
  • [19] Into the origin of electrical conductivity for the metal-semiconductor junction at the atomic level
    Janas, A.
    Piskorz, W.
    Kryshtal, A.
    Cempura, G.
    Belza, W.
    Kruk, A.
    Jany, B. R.
    Krok, F.
    APPLIED SURFACE SCIENCE, 2021, 570 (570)
  • [20] MEASUREMENT OF SEMICONDUCTOR-INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY
    JOHNSON, NM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 760 - 760
12345