STUDY OF INTERFACE STATES IN THE METAL-SEMICONDUCTOR JUNCTION USING DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：24

作者：

ZHANG, H ^{[1
]}

AOYAGI, Y ^{[1
]}

IWAI, S ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.98194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：341 / 343

页数：3

共 50 条

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[2] STUDY OF METAL-SEMICONDUCTOR INTERFACE STATES USING DEEP LEVEL TRANSIENT SPECTROSCOPY.
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