BAND-GAP SHIFT IN CDS SEMICONDUCTOR BY PHOTOACOUSTIC-SPECTROSCOPY - EVIDENCE OF A CUBIC TO HEXAGONAL LATTICE TRANSITION

被引：203
|
作者：
ZELAYAANGEL, O
ALVARADOGIL, JJ
LOZADAMORALES, R
VARGAS, H
DASILVA, AF
机构：
[1] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13081970 CAMPINAS,SP,BRAZIL
[2] INPE,ASSOCIADO SENSORES E MAT LAB,LAS,BR-12225 S JOSE CAMPOS,BRAZIL
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期
关键词：
D O I：
10.1063/1.111184
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The band-gap energies of the CdS semiconductor are obtained by a photoacoustic spectroscopy (PAS) technique over a range of temperature of thermal annealing (TTA), in which the evolution of the sample structure is characterized by x-ray diffraction patterns. The PAS experiment gives a set of data for the band-gap shift in the region of the fundamental absorption edge. With increasing TTA the band-gap shift increases up to a critical TTA when its slope decreases in a roughly symmetrical way. It is suggested that at this temperature a cubic to hexagonal-lattice transition occurs.
引用
收藏
页码：291 / 293
页数：3
相关论文
共 42 条
  • [21] BAND-GAP RENORMALIZATION IN MULTIPLE QUANTUM WELLS - EVIDENCE AGAINST THE RIGID SHIFT MODEL
    ABRAM, I
    LEVENSON, JA
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (02) : 181 - 184
  • [22] Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
    Fernandez, JRL
    Araújo, CM
    da Silva, AF
    Leite, JR
    Sernelius, BE
    Tabata, A
    Abramof, E
    Chitta, VA
    Persson, C
    Ahuja, R
    Pepe, I
    As, DJ
    Frey, T
    Schikora, D
    Lischka, K
    JOURNAL OF CRYSTAL GROWTH, 2001, 231 (03) : 420 - 427
  • [23] Optical band-gap shift in (InAs)GaAs/AlGaAs HEMTs structures studied by photoluminescence spectroscopy
    Daoudi, M.
    Kaouach, H.
    Dhifallah, I.
    Ouerghi, A.
    Chtourou, R.
    OPTIK, 2015, 126 (9-10): : 932 - 936
  • [24] Exchange-mediated magnetic blue-shift of the band-gap energy in the antiferromagnetic semiconductor MnTe
    Bossini, D.
    Terschanski, M.
    Mertens, F.
    Springholz, G.
    Bonanni, A.
    Uhrig, G. S.
    Cinchetti, M.
    NEW JOURNAL OF PHYSICS, 2020, 22 (08):
  • [25] Variable band-gap Sr-hexagonal ferrites on carboxylated graphene oxide composite as an efficient photocatalytic semiconductor
    Taghipour, Masomeh
    Yousefi, Mohammad
    Fazaeli, Reza
    Ganji, Masoud Darvish
    JOURNAL OF NANOANALYSIS, 2022, 9 (03): : 193 - 205
  • [26] Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition
    Cih-Su Wang
    Chi-Shung Liau
    Tzu-Ming Sun
    Yu-Chia Chen
    Tai-Yuan Lin
    Yang-Fang Chen
    Scientific Reports, 5
  • [27] Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition
    Wang, Cih-Su
    Liau, Chi-Shung
    Sun, Tzu-Ming
    Chen, Yu-Chia
    Lin, Tai-Yuan
    Chen, Yang-Fang
    SCIENTIFIC REPORTS, 2015, 5
  • [28] Quantum confinement effects in variable band-gap GaNxAs1-x thin films studied by photoacoustic spectroscopy
    Cardona-Bedoya, JA
    Cruz-Orea, A
    Tomas-Velazquez, SA
    Zelaya-Angel, O
    Mendoza-Alvarez, JG
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (01): : 854 - 856
  • [29] Apparent band-gap energies of mixed TiO2 nanocrystals with anatase and rutile structures characterized with photoacoustic spectroscopy
    Toyoda, T
    Tsuboya, I
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (01): : 782 - 784
  • [30] Indirect-to-direct band-gap transition in few-layer β-InSe as probed by photoluminescence spectroscopy
    Borodin, B. R.
    Eliseyev, I. A.
    Galimov, A. I.
    Kotova, L. V.
    V. Durnev, M.
    V. Shubina, T.
    Yagovkina, M. A.
    V. Rakhlin, M.
    PHYSICAL REVIEW MATERIALS, 2024, 8 (01)
12345