BAND-GAP SHIFT IN CDS SEMICONDUCTOR BY PHOTOACOUSTIC-SPECTROSCOPY - EVIDENCE OF A CUBIC TO HEXAGONAL LATTICE TRANSITION

被引：203
|
作者：
ZELAYAANGEL, O
ALVARADOGIL, JJ
LOZADAMORALES, R
VARGAS, H
DASILVA, AF
机构：
[1] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13081970 CAMPINAS,SP,BRAZIL
[2] INPE,ASSOCIADO SENSORES E MAT LAB,LAS,BR-12225 S JOSE CAMPOS,BRAZIL
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期
关键词：
D O I：
10.1063/1.111184
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The band-gap energies of the CdS semiconductor are obtained by a photoacoustic spectroscopy (PAS) technique over a range of temperature of thermal annealing (TTA), in which the evolution of the sample structure is characterized by x-ray diffraction patterns. The PAS experiment gives a set of data for the band-gap shift in the region of the fundamental absorption edge. With increasing TTA the band-gap shift increases up to a critical TTA when its slope decreases in a roughly symmetrical way. It is suggested that at this temperature a cubic to hexagonal-lattice transition occurs.
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页码：291 / 293
页数：3
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