THERMAL-CHANGE OF SNI2 THIN-FILMS .1. THERMOGRAVIMETRY

被引：14
|
作者：
SAWADA, Y
SUZUKI, M
机构：
[1] Department of Industrial Chemistry, Faculty of Engineering, Tokyo Institute of Polytechnics, Atsugi-shi, Kanagawa, 243-02
来源：
THERMOCHIMICA ACTA | 1994年 / 232卷 / 01期
关键词：
D O I：
10.1016/0040-6031(94)80042-1
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Thermal change of tin iodide (SnI2) evaporated film as-deposited on a glass substrate has been successfully detected by TG (heating rate, 10-degrees-C/min-1) film mass about 0.5 mg, film area about 2 cm2. A mass loss at 260-420-degrees-C in an argon flow is attributed to the evaporation of SnI2. A mass loss at 180-290-degrees-C in an air flow is interpreted as oxidation of SnI2 to form SnI4 vapor and tin oxide. The TG-DTA for SnI2 and SnI4 powders in a nitrogen flow (heating rate, 10-degrees-C min have been performed to understand the thermal change of SnI2 thin films; an endothermic phenomenon without mass change attributed to melting at 319 and 144-degrees-C and an endothermic mass loss attributed to evaporation at 300-460 and 85-190-degrees-C were observed for SnI2 and SnI4 powders, respectively. A small mass loss (about 7%) at 85-150-degrees-C for SnI2 powders is attributed to the evaporation of SnI4 impurity.
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页码：29 / 36
页数：8
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