INFLUENCE OF AN ELECTRIC FIELD ON RECOMBINATION AND SCATTERING OF CARRIERS IN P-TYPE GERMANIUM WITH DEEP IMPURITIES

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BESFAMILNAYA, VA
OSTROBOR.VV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 3卷 / 01期
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O469 [凝聚态物理学];
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070205 ;
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页码:110 / +
页数:1
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