共 50 条
- [11] ELECTRIC PROPERTIES OF DISLOCATIONS IN P-TYPE GERMANIUM PHYSICA STATUS SOLIDI, 1969, 32 (02): : 589 - +
- [12] THE MECHANISM OF CARRIER SCATTERING IN P-TYPE GERMANIUM SOVIET PHYSICS-SOLID STATE, 1961, 2 (07): : 1298 - 1300
- [13] HIGH-FREQUENCY MODULATION OF 10 MU RADIATION BY ELECTRIC-FIELD HEATING OF CARRIERS IN P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1265 - 1267
- [14] RECOMBINATION OF CARRIERS AT ZINC ATOMS IN P-TYPE SILICON SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 157 - +
- [15] INFLUENCE OF A STRONG MAGNETIC FIELD ON CARRIER HEATING IN P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (10): : 1326 - &
- [16] INFLUENCE OF A MAGNETIC-FIELD ON HOPPING CONDUCTION IN P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1364 - 1367
- [17] EFFECT OF MINORITY IMPURITIES ON IMPURITY CONDUCTION IN P-TYPE GERMANIUM PHYSICAL REVIEW, 1959, 113 (04): : 999 - 1001
- [18] FIELD DEPENDENCE OF MOBILITY IN P-TYPE GERMANIUM PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (09): : 899 - 900
- [20] INTRINSIC DENSITY OF CARRIERS IN HEAVILY DOPED P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (04): : 670 - &