INFLUENCE OF AN ELECTRIC FIELD ON RECOMBINATION AND SCATTERING OF CARRIERS IN P-TYPE GERMANIUM WITH DEEP IMPURITIES

被引：0

作者：

BESFAMILNAYA, VA

OSTROBOR.VV

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来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 3卷 / 01期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：110 / +

页数：1

共 50 条

[1] HEATING OF CARRIERS IN P-TYPE GERMANIUM BY A WEAK ELECTRIC-FIELD
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[2] INFLUENCE OF UNIAXIAL COMPRESSION ON THE HEATING OF CARRIERS IN P-TYPE GERMANIUM BY A WEAK ELECTRIC-FIELD
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[3] INFLUENCE OF HOLE-HOLE COLLISIONS ON HEATING OF CARRIERS IN P-TYPE GERMANIUM BY A WEAK ELECTRIC-FIELD
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[4] INFLUENCE OF AN ELECTRIC FIELD ON RECOMBINATION IN GE DOPED WITH DEEP IMPURITIES
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[5] HALL EFFECT IN P-TYPE GERMANIUM AT HIGH ELECTRIC FIELD
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[6] INFLUENCE OF COMPENSATION OF IMPURITIES ON ELECTRIC BREAKDOWN IN P-TYPE GE
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 271 - 274
[7] RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN P-TYPE PBSNSE
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 765 - 768
[8] DIFFUSION AND P-TYPE CONDUCTION OF MAGNESIUM IMPURITIES IN GERMANIUM
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APPLIED PHYSICS LETTERS, 1979, 35 (05) : 409 - 410
[9] RADIATIVE RECOMBINATION IN HEAVILY DOPED P-TYPE GERMANIUM
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[10] RECOMBINATION OF HOLES AT SHALLOW ACCEPTORS IN P-TYPE GERMANIUM
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OSTROBOR.VV
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