A SEMIANALYTIC MODEL OF THE PERMEABLE BASE TRANSISTOR

被引：4

作者：

NILSSON, HE ^{[1
]}

SANNEMO, U ^{[1
]}

PETERSSON, CS ^{[1
]}

机构：

[1] MID SWEDEN UNIV, SCH SCI & ENGN, S-85170 SUNDSVALL, SWEDEN

来源：

PHYSICA SCRIPTA | 1994年 / 54卷

关键词：

D O I：

10.1088/0031-8949/1994/T54/039

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The I-V characteristics of the Permeable Base Transistor (PBT) has been investigated in order to find a simple and practical model for use in circuit designs. Two possible approaches has been discussed, a one-dimensional analytical solution and a semi-analytical solution mixing analytical and empirical methods. The semi-analytical model developed in this paper offers high accuracy and a simple and fast evaluation. All model parameters can be extracted from a set of I-V curves from two typical transistors with different threshold voltages. An analytical small signal model has been developed that agrees very well with two-dimensional simulations.

引用

页码：159 / 164

页数：6

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