A SEMIANALYTIC MODEL OF THE PERMEABLE BASE TRANSISTOR

The I-V characteristics of the Permeable Base Transistor (PBT) has been investigated in order to find a simple and practical model for use in circuit designs. Two possible approaches has been discussed, a one-dimensional analytical solution and a semi-analytical solution mixing analytical and empirical methods. The semi-analytical model developed in this paper offers high accuracy and a simple and fast evaluation. All model parameters can be extracted from a set of I-V curves from two typical transistors with different threshold voltages. An analytical small signal model has been developed that agrees very well with two-dimensional simulations.