DOMAIN-STRUCTURE OF DOPED PLZT CERAMICS

被引：2
|
作者：
PLAUDE, A
机构：
[1] Institute of Solid State Physics, University of Latvia, 8 Kengaraga St., Riga
来源：
FERROELECTRICS | 1992年 / 131卷 / 1-4期
关键词：
CERAMICS; DOPANTS; DEFECTS; GRAIN BOUNDARIES; DOMAIN STRUCTURE;
D O I：
10.1080/00150199208223424
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Results of microstructure studies of Cr, Mn, Fe, Co, Ni and Cu doped PLZT 8/65/35 ceramics are reported. Most of them are explained by dopant-induced domain structure in PLZT ceramics.
引用
收藏
页码：257 / 265
页数：9
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