INSITU MONITORING OF SURFACE KINETICS IN GAAS ATOMIC LAYER EPITAXY BY SURFACE PHOTOABSORPTION METHOD

被引：21
|
作者：
KOUKITU, A
IKEDA, H
SUZUKI, H
SEKI, H
机构：
[1] Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期
关键词：
ATOMIC LAYER EPITAXY (ALE); HALOGEN TRANSPORT ALE; SURFACE PHOTOABSORPTION (SPA); INSITU MONITORING; GAAS;
D O I：
10.1143/JJAP.30.L1712
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The epitaxial growth reactions that proceed on the substrate surface during halogen transport atomic layer epitaxy (ALE) are observed directly with a surface photo-absorption method. The heat of desorption (48.5 kcal/mol) is obtained from the reflective intensity change. The value agrees well with the activation energy reported in classical halogen transport vapor-phase epitaxy. Based on the observation, a reaction mechanism is proposed. The self-limiting mechanism of halogen transport ALE is ascribed to the complete coverage of surface As sites by the adsorbed complex.
引用
收藏
页码：L1712 / L1714
页数：3
相关论文
共 50 条
  • [1] INSITU MONITORING AND CONTROL OF ATOMIC LAYER EPITAXY BY SURFACE PHOTOABSORPTION
    KOBAYASHI, N
    KOBAYASHI, Y
    THIN SOLID FILMS, 1993, 225 (1-2) : 32 - 39
  • [2] INSITU OBSERVATION OF ATOMIC LAYER EPITAXY OF GAAS USING GACL3 BY SURFACE PHOTOABSORPTION METHOD
    KOBAYASHI, R
    NARAHARA, S
    ISHIKAWA, K
    HASEGAWA, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2A): : L164 - L166
  • [3] THE SURFACE-CHEMISTRY AND KINETICS OF GAAS ATOMIC LAYER EPITAXY
    CREIGHTON, JR
    BANSENAUER, BA
    THIN SOLID FILMS, 1993, 225 (1-2) : 17 - 25
  • [4] INSITU MONITORING OF GAAS GROWTH-PROCESS IN MOVPE BY SURFACE PHOTOABSORPTION METHOD
    KOBAYASHI, N
    MAKIMOTO, T
    YAMAUCHI, Y
    HORIKOSHI, Y
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 62 - 67
  • [5] In situ monitoring of the chemisorption of hydrogen atoms on (001) GaAs surface in GaAs atomic layer epitaxy
    Koukitu, A
    Taki, T
    Takahashi, N
    Seki, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (6A): : L710 - L712
  • [6] Surface smoothing of GaAs microstructure by atomic layer epitaxy
    Appl Phys Lett, 7 (964):
  • [7] Surface smoothing of GaAs microstructure by atomic layer epitaxy
    Hirose, S
    Yoshida, A
    Yamaura, M
    Munekata, H
    APPLIED PHYSICS LETTERS, 1999, 74 (07) : 964 - 966
  • [8] THE SURFACE-CHEMISTRY OF GAAS ATOMIC LAYER EPITAXY
    CREIGHTON, JR
    BANSE, BA
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 202 : 69 - COLL
  • [9] INSITU GRAVIMETRIC MONITORING OF THE GAAS GROWTH-PROCESS IN ATOMIC LAYER EPITAXY
    KOUKITU, A
    IKEDA, H
    YASUTAKE, H
    SEKI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (11A): : L1847 - L1849
  • [10] Determination of surface chemical species in GaAs atomic layer epitaxy by in situ gravimetric monitoring
    Koukitu, Akinori, 1600, JJAP, Minato-ku, Japan (33):
12345