REACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDE

被引：1

作者：

LAN, WH ^{[1
]}

LIN, WJ ^{[1
]}

TU, SL ^{[1
]}

YANG, SJ ^{[1
]}

HUANG, KF ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,DEPT ELECTROPHYS,HSINCHU,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1A期

关键词：

PHOTOCHEMICAL VAPOR DEPOSITION; LANGMUIR-HINSHELWOOD THEORY;

D O I：

10.1143/JJAP.32.150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-naximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (P(s)=P(SiH4)/P(total)) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined.

引用

页码：150 / 154

页数：5

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