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- [2] CONDUCTIVITY IN ANISOTROPIC SEMICONDUCTORS - APPLICATION TO LONGITUDINAL RESISTIVITY AND HALL-EFFECT IN SATURATION-STRESSED DEGENERATELY DOPED N-TYPE GERMANIUM[J]. PHYSICAL REVIEW B, 1972, 5 (04): : 1499 - &KRIEGER, JBMEEKS, TESPOSITO, E
- [3] TRANVERSE RESISTIVITY OF SATURATION STRESSED DEGENERATELY DOPED N-TYPE GERMANIUM AT T=O0K[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (04): : 554 - &ESPOSITO, EKRIEGER, JBMEEKS, T
- [4] RESISTIVITY OF N-TYPE DEGENERATELY DOPED SILICON AT LOW-TEMPERATURE - DIELECTRIC-SCREENING EFFECTS[J]. PHYSICAL REVIEW B, 1974, 9 (08) : 3627 - 3629KRIEGER, JBGRUENEBAUM, JMEEKS, T
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- [6] LOW-TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTIVITY OF DEGENERATE N-TYPE GERMANIUM[J]. PHYSICAL REVIEW LETTERS, 1965, 15 (21) : 828 - &KATZ, MJKOENIG, SHLOPEZ, AA
- [7] LOW-TEMPERATURE THERMOELECTRIC POWER OF HEAVILY DOPED N-TYPE GERMANIUM[J]. CANADIAN JOURNAL OF PHYSICS, 1965, 43 (11) : 2008 - &HEDGCOCK, FTMATHUR, DP
- [8] DIELECTRIC ENHANCEMENT OF RESISTIVITY OF DEGENERATELY DOPED N-TYPE SILICON[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (01): : 17 - 17MEEKS, TKRIEGER, JB
- [9] LOW-TEMPERATURE IRRADIATION OF N-TYPE GERMANIUM[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (02) : 149 - 151CLELAND, JWCRAWFORD, JH
- [10] LOW-TEMPERATURE MEASUREMENTS OF THE THERMAL EMF OF HIGHLY DOPED N-TYPE GERMANIUM[J]. SOVIET PHYSICS-SOLID STATE, 1964, 6 (01): : 11 - 12CHERKAS, KVFISTUL, VI