BIPOLAR NPN TRANSISTOR WITH REDUCED LOW CURRENT BETA FALLOFF

被引：1
|
作者：
HANSELL, GL
FONSTAD, CG
机构：
[1] MIT,LEXINGTON,MA 02173
[2] MIT,CAMBRIDGE,MA 02139
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 09期
关键词：
D O I：
10.1109/T-ED.1977.18934
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1200 / 1201
页数：2
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