SELF-INTERACTION CORRECTION TO THE LOCAL-DENSITY APPROXIMATION IN THE CALCULATION OF THE ENERGY-BAND GAPS OF SEMICONDUCTORS BASED ON THE FULL-POTENTIAL LINEARIZED AUGMENTED-PLANE-WAVE METHOD

被引：23

|

作者：

HAMADA, N

OHNISHI, S

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.34.9042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：9042 / 9044

页数：3

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