共 50 条
- [1] SMALL-SIGNAL DOUBLE INJECTION IN P-I-N STRUCTURES SUBJECTED TO A MAGNETIC-FIELD [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (10): : 1114 - 1118
- [2] DOUBLE-INJECTION CURRENTS IN ZN-COMPENSATED SILICON P-I-N STRUCTURES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (01): : 391 - 395
- [4] Double injection in graphene p-i-n structures [J]. 1600, American Institute of Physics Inc. (113):
- [6] OBSERVATION OF DOUBLE INJECTION IN LONG SILICON P-I-N STRUCTURES [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A286 - &
- [7] COMPARISON OF SHORT AND LONG P-I-N GERMANIUM DOUBLE-INJECTION SPACE-CHARGE LIMITED DIODES [J]. PHYSICA B & C, 1975, 79 (01): : 76 - 82
- [8] Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination [J]. PHYSICAL REVIEW B, 1997, 55 (23): : 15619 - 15630