THE NONRADIATIVE EFFICIENCY IN HYDROGENATED AMORPHOUS-SILICON

被引：7
|
作者：
FAN, J
KAKALIOS, J
机构：
[1] The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 64卷 / 04期
关键词：
D O I：
10.1080/09500839108214548
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The non-radiative efficiency eta-nr has been directly measured in hydrogenated amorphous silicon using photo-pyroelectric spectroscopy, for photon energies ranging from 1.5 to 2.2 eV at room temperature. The non-radiative efficiency is fairly constant for above-bandgap illumination, but displays a sharp minimum for photon energies near the bandgap energy. Eta-nr increases with sub-bandgap illumination, saturating at a value roughly one half as large as its high-energy value.
引用
收藏
页码：235 / 240
页数：6
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