A MOLECULAR-BEAM STUDY OF THE TRAPPING AND DESORPTION OF OXYGEN FROM SI(100) SURFACES

被引：8

作者：

MIYAKE, T ^{[1
]}

NAMIKI, A ^{[1
]}

TAKEMOTO, T ^{[1
]}

SOEKI, S ^{[1
]}

KATOH, H ^{[1
]}

KAMBA, H ^{[1
]}

SUZAKI, T ^{[1
]}

NAKAMURA, T ^{[1
]}

机构：

[1] TOYOKO KAGAKU CO LTD,KAWASAKI 221,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 04期

关键词：

Desorption; Dissociative adsorption; Physisorbed well; Pulsed molecular beam method; Sticking; TOF; Trapping;

D O I：

10.1143/JJAP.29.723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The trapping and desorption kinetics of oxygen on, Si(100) surfaces have been studied by a pulsed molecular beam method. The trapping process in a physisorbed well is a dominant process for the incident energy below 0.09 eV. Above 0.3 eV, the trapping probability decreases with increasing incident energy or with increasing surface temperature. The trapping process is explained by a simple hard cube model. The desorption yield increases with surface temperature for a low coverage surface. Taking the decrease in the sticking probability with surface temperature into account [M. P. D'Evelyn, et al.: Surf. Sci. 186 (1987) 75], this is direct evidence for the physisorbed oxygen-mediated dissociative adsorption which is considered to be an initial stage of the oxidation of Si. The activation energy for dissociative adsorption of physisorbed oxygen increases with oxygen coverage. © 1990 The Japan Society of Applied Physics.

引用

页码：723 / 728

页数：6

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