CORRELATION OF TEM AND RAMAN-SPECTROSCOPY IN THE INVESTIGATION OF ION-IMPLANTATION DAMAGE IN SILICON

被引：0
|
作者：
DEWILTON, AC
WEAVER, L
OLIVER, BA
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The residual damage after implantation and subsequent rapid thermal annealing of silicon wafers implanted with 20keV B+ or 90keV BF2+ ions has been investigated for doses of 3x10(15) to 3x10(16) ions-cm-2. TEM and SIMS findings were correlated with Raman spectra to define the limitations of this rapid and non-destructive method of monitoring materials and processes during semiconductor fabrication.
引用
下载
收藏
页码：525 / 530
页数：6
相关论文
共 50 条
  • [41] SILICON PRODUCTION APPLICATIONS OF ION-IMPLANTATION
    SMITH, TC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (08): : 1031 - 1031
  • [42] ION-IMPLANTATION GETTERING OF GOLD IN SILICON
    SIGMON, TW
    CSEPREGI, L
    MAYER, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1116 - 1117
  • [43] THE CHARACTERIZATION OF POROUS SILICON BY RAMAN-SPECTROSCOPY
    GOODES, SR
    JENKINS, TE
    BEALE, MIJ
    BENJAMIN, JD
    PICKERING, C
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) : 483 - 487
  • [44] CHANNELING EFFECTS IN ION-IMPLANTATION IN SILICON
    RAINERI, V
    PRIVITERA, V
    CAMPISANO, SU
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1994, 130 : 399 - 413
  • [45] SYNTHESIS OF SILICON DIOXIDE BY ION-IMPLANTATION
    WILSON, IH
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3): : 331 - 343
  • [46] MASS-SPECTROSCOPY IN ION-IMPLANTATION
    MATTESON, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 145 - 147
  • [47] ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION
    KIM, Y
    FAIR, RB
    MASSOUD, HZ
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S26 - S26
  • [48] RADIATION-DAMAGE AND AMORPHIZATION OF SILICON BY 2 MEV NITROGEN ION-IMPLANTATION
    LINDNER, JKN
    ZUSCHLAG, R
    TEKAAT, EH
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 62 (03): : 314 - 318
  • [49] ANNEALING AND GETTERING BEHAVIOR OF INERT-GAS ION-IMPLANTATION DAMAGE IN SILICON
    CULLIS, AG
    SEIDEL, TE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C360 - C360
  • [50] CHARACTERIZATION OF SILICON ION-IMPLANTATION DAMAGE IN STRAINED-LAYER SEMICONDUCTOR SYSTEMS
    MYERS, DR
    ARNOLD, GW
    DAWSON, LR
    BIEFELD, RM
    HILLS, CE
    DOYLE, BL
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A28 - A28
12345