CORRELATION OF TEM AND RAMAN-SPECTROSCOPY IN THE INVESTIGATION OF ION-IMPLANTATION DAMAGE IN SILICON

被引：0
|
作者：
DEWILTON, AC
WEAVER, L
OLIVER, BA
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The residual damage after implantation and subsequent rapid thermal annealing of silicon wafers implanted with 20keV B+ or 90keV BF2+ ions has been investigated for doses of 3x10(15) to 3x10(16) ions-cm-2. TEM and SIMS findings were correlated with Raman spectra to define the limitations of this rapid and non-destructive method of monitoring materials and processes during semiconductor fabrication.
引用
下载
收藏
页码：525 / 530
页数：6
相关论文
共 50 条
  • [1] CORRELATION OF TEM AND RAMAN-SPECTROSCOPY IN THE INVESTIGATION OF ION-IMPLANTATION DAMAGE IN SILICON
    DEWILTON, AC
    WEAVER, L
    OLIVER, BA
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 525 - 530
  • [2] RAMAN-SPECTROSCOPY FOR NONDESTRUCTIVE DEPTH PROFILE STUDIES OF ION-IMPLANTATION IN SILICON
    DEWILTON, AC
    SIMARDNORMANDIN, M
    WONG, PTT
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (05) : 988 - 993
  • [3] COMPARATIVE INVESTIGATION OF DAMAGE-INDUCED BY DIATOMIC AND MONOATOMIC ION-IMPLANTATION IN SILICON
    LOHNER, T
    TOTH, Z
    FRIED, M
    KHANH, NQ
    YANG, GQ
    LU, LC
    ZOU, SC
    HANEKAMP, LJ
    VANSILFHOUT, A
    GYULAI, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 85 (1-4): : 524 - 527
  • [4] ION-IMPLANTATION DAMAGE IN GAAS - TEM STUDY OF VARIATION WITH ION SPECIES AND STOICHIOMETRY
    ELLIOTT, CR
    AMBRIDGE, T
    HECKINGBOTTOM, R
    SOLID-STATE ELECTRONICS, 1978, 21 (06) : 859 - 863
  • [5] GROWTH-RATE OF CRYSTALLIZATION IN AMORPHOUS-GERMANIUM PRODUCED BY ION-IMPLANTATION - RAMAN-SPECTROSCOPY STUDY
    ZELLAMA, K
    MORHANGE, JF
    GERMAIN, P
    BOURGOIN, JC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02): : 717 - 723
  • [6] TEM STUDY OF SILICON ON INSULATOR STRUCTURES OBTAINED BY OXYGEN ION-IMPLANTATION
    DEVEIRMAN, A
    YALLUP, K
    VANLANDUYT, J
    MAES, HE
    AMELINCKX, S
    MICRON AND MICROSCOPICA ACTA, 1987, 18 (03): : 247 - 248
  • [7] A TEM INVESTIGATION OF SOLID KRYPTON BUBBLES FORMED IN COBALT BY ION-IMPLANTATION
    MITCHELL, DRG
    DONNELLY, SE
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 114 (03): : 253 - 261
  • [8] ION-IMPLANTATION DAMAGE AND ANNEALING OF SILICON AS CHARACTERIZED BY DIFFERENTIAL REFLECTOMETRY
    HUMMEL, RE
    XI, W
    HAGMANN, DR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) : 3583 - 3588
  • [9] SILICON SCHOTTKY-BARRIER MODIFICATION BY ION-IMPLANTATION DAMAGE
    ASHOK, S
    MOGROCAMPERO, A
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 48 - 49
  • [10] ANNEALING OF ION-IMPLANTATION DAMAGE IN ALUMINUM OBSERVED BY QUANTITATIVE ELECTRON CHANNELING AND TEM
    VARDIMAN, RG
    GOSSETT, CR
    JOURNAL OF METALS, 1987, 39 (10): : A71 - A71
12345