LATTICE MISMATCH EFFECTS IN THE VAPOR-PHASE EPITAXIAL-GROWTH OF TERNARY III-V SEMICONDUCTORS

被引：0

作者：

SCHILLER, C

GOWERS, JP

机构：

来源：

ACTA ELECTRONICA | 1978年 / 21卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：167 / 178

页数：12

共 50 条

[1] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS
STRINGFELLOW, GB
[J]. SEMICONDUCTORS AND SEMIMETALS, 1985, 22 : 209 - 259
[2] METALORGANIC CHLORIDE VAPOR-PHASE EPITAXIAL-GROWTH OF III-V COMPOUNDS IN A SINGLE REACTOR
KONDO, S
MATSUMOTO, S
NAGAI, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1993, 132 (1-2) : 305 - 314
[3] VAPOR-PHASE GROWTH OF SEVERAL III-V COMPOUND SEMICONDUCTORS
TIETJEN, JJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 242 - &
[4] VAPOR-PHASE GROWTH OF SEVERA III-V COMPOUND SEMICONDUCTORS
TIETJEN, JJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 149 - &
[5] VAPOR-PHASE GROWTH OF SEVERAL III-V COMPOUND SEMICONDUCTORS
TIETJEN, JJ
BAN, VS
ENSTROM, RE
RICHMAN, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : S5 - &
[6] EPITAXIAL-GROWTH OF AIIIBV SEMICONDUCTORS FROM VAPOR-PHASE
GOROG, T
LENDVAY, E
[J]. ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1978, 44 (01): : 13 - 28
[7] EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS USING ORGANOMETALLICS AND HYDRIDES
HALLAIS, JP
[J]. ACTA ELECTRONICA, 1978, 21 (02): : 129 - 138
[8] GAAS VAPOR-PHASE EPITAXIAL-GROWTH
HARADA, H
[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1972, 20 (11-1): : 1077 - 1086
[9] REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
FOORD, JS
FRENCH, CL
LEVOGUER, CL
DAVIES, GJ
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 344 (1673): : 507 - 520
[10] DYNAMIC-MODEL OF EPITAXIAL-GROWTH IN TERNARY III-V SEMICONDUCTOR ALLOYS
GU, BL
HUANG, ZF
NI, J
[J]. PHYSICAL REVIEW B, 1995, 51 (11) : 7104 - 7111

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