FTIR IN-SITU STUDIES OF THE GAS-PHASE REACTIONS IN CHEMICAL-VAPOR-DEPOSITION OF SIC

被引：37

作者：

JONAS, S ^{[1
]}

PTAK, WS ^{[1
]}

SADOWSKI, W ^{[1
]}

WALASEK, E ^{[1
]}

PALUSZKIEWICZ, C ^{[1
]}

机构：

[1] JAGIELLONIAN UNIV,REG LAB,PL-30060 KRAKOW,POLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 07期

关键词：

D O I：

10.1149/1.2044300

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The gas phase during the chemical vapor deposition of silicon carbide from CH3SiCl3 has been investigated by means of FTIR spectroscopy in the in situ conditions. Results show the formation of SiCl4 and CH4 molecules which are the transition products in the deposition process, according to earlier suppositions. The gas phase reaction induced by small amounts of HCl (or H2O) in the system is an autocatalytic one. The mechanism of surface reactions is proposed. The importance of gas phase analysis in the deposition process is indicated.

引用

页码：2357 / 2362

页数：6

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