A HIGH-PERFORMANCE DELTA-DOPED GAAS/IN(X)GA(1-X)AS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR UTILIZING A GRADED IN(X)GA(1-X)AS CHANNEL

被引：15
|
作者：
SHIEH, HM
HSU, WC
HSU, RT
WU, CL
WU, TS
机构：
[1] Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan R. O. C.
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 12期
关键词：
D O I：
10.1109/55.260796
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new delta-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This structure revealed an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density as high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 mum. The maximum transconductance versus gate bias extended a broad and flat region of more than 2 V at 300 K. In addition, a low gate leakage current ( < 10 muA at -7 V) at 300 K was obtained.
引用
收藏
页码：581 / 583
页数：3
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