UNOCCUPIED SURFACE ELECTRONIC-STRUCTURE OF GD(0001)

被引：23
|
作者：
LI, DL
DOWBEN, PA
ORTEGA, JE
HIMPSEL, FJ
机构：
[1] ARGONNE NATL LAB,DEPT PHYS,ARGONNE,IL 60439
[2] UNIV NEBRASKA,DEPT PHYS,LINCOLN,NE 68588
[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[4] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICAL REVIEW B | 1994年 / 49卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.49.7734
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near E(F) is observed at GAMMABAR. Two other surface-sensitive features are also revealed at 1.2 and 3.1 eV above the Fermi level. Hydrogen adsorption on Gd surfaces was used to distinguish the surface-sensitive features from the bulk features. The unoccupied bulk-band critical points are determined to be GAMMA3+ at 1.9 eV and A1 at 0.8 eV.
引用
收藏
页码：7734 / 7738
页数：5
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