NONLINEAR-INTERACTION OF ACOUSTIC SURFACE-WAVES IN EPITAXIAL GALLIUM-ARSENIDE

被引：3
|
作者：
LUDVIK, S
QUATE, CF
机构：
来源：
ELECTRONICS LETTERS | 1972年 / 8卷 / 22期
关键词：
D O I：
10.1049/el:19720402
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：551 / &
相关论文
共 50 条
  • [31] PROPERTIES OF ACOUSTIC-WAVES UNDER LASER TREATMENT OF GALLIUM-ARSENIDE
    BLAZHIS, A
    ZHILENIS, S
    TAUTVAISHAS, G
    ZHURNAL TEKHNICHESKOI FIZIKI, 1988, 58 (11): : 2237 - 2239
  • [32] NONLINEAR-INTERACTION OF S-POLARIZED INCIDENT RADIATION AND SURFACE-WAVES IN MAGNETOACTIVE PLASMA
    ELSIRAGY, NM
    KHALIL, SM
    SAYED, YA
    ELSHERIF, RN
    CONTRIBUTIONS TO PLASMA PHYSICS, 1985, 25 (03) : 227 - 231
  • [33] NONLINEAR EFFECTS IN ACOUSTIC SURFACE-WAVES
    NAKAGAWA, Y
    YAMANOUCHI, K
    SHIBAYAMA, K
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1972, 55 (10): : 1 - 7
  • [34] PHOTOLUMINESCENCE SPECTRA OF EPITAXIAL FILMS OF GALLIUM-ARSENIDE
    MARONCHUK, YE
    SHERSTYAKOV, AP
    SHERSTYAKOVA, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1400 - 1401
  • [35] STRUCTURAL INHOMOGENEITIES IN GALLIUM-ARSENIDE EPITAXIAL LAYERS
    ASTAKHOV, VM
    ZALETIN, VM
    SIDOROV, YG
    STENIN, SI
    THIN SOLID FILMS, 1976, 32 (02) : 343 - 345
  • [36] ANALYSIS OF MOBILITY IN EPITAXIAL GALLIUM-ARSENIDE FILMS
    KRAVCHENKO, AF
    MOROZOV, BV
    SKOK, EM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1831 - 1834
  • [37] RECOMBINATION PROPERTIES OF GALLIUM-ARSENIDE EPITAXIAL STRUCTURES
    KOROTOV, VF
    STANEV, N
    KHITKO, VI
    YANCHENKO, AM
    ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (06): : 170 - 171
  • [38] ADSORPTION AND CHARGE CHARACTERISTICS OF EPITAXIAL GALLIUM-ARSENIDE
    KIROVSKAYA, IA
    SHAKALOV, FE
    ZHURNAL FIZICHESKOI KHIMII, 1980, 54 (10): : 2493 - 2497
  • [39] SELENIUM IMPLANTATION IN EPITAXIAL GALLIUM-ARSENIDE LAYERS
    INADA, T
    TOKUNAGA, K
    TAKA, S
    YUGE, Y
    KOHZU, H
    NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 709 - 717
  • [40] RADIATIVE RECOMBINATION IN EPITAXIAL COMPENSATED GALLIUM-ARSENIDE
    ALFEROV, ZI
    ANDREEV, VM
    GARBUZOV, DZ
    TRUKAN, MK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1718 - 1725
12345